Method of manufacturing a semiconductor component and structure

ABSTRACT

A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

TECHNICAL FIELD

The present invention relates, in general, to semiconductor componentsand, more particularly, to signal transmission in semiconductorcomponents.

BACKGROUND

Transmission protocols within communications systems may include the useof single-ended signals, differential signals, or combinations ofsingle-ended and differential signals. For example, single-ended signalsand differential signals are suitable for use in portable communicationssystems that employ low speed data transmission. However, incommunications systems that employ high speed data transmission such asin Universal Serial Bus (USB) applications, it is desirable to usedifferential signals because of their noise immunity properties.

Accordingly, it would be advantageous to have a structure and method formaintaining the amplitude and phase of a differential signal, whilefiltering out spurious common-mode signals introduced by, for example,transmission line effects. It would be of further advantage for thestructure and method to be cost efficient to implement.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be better understood from a reading of thefollowing detailed description, taken in conjunction with theaccompanying drawing figures, in which like reference charactersdesignate like elements and in which:

FIG. 1 is a cross-sectional view of a semiconductor component at anearly stage of manufacture in accordance with an embodiment of thepresent invention;

FIG. 2 is a cross-sectional view of the semiconductor component of FIG.1 at a later stage of manufacture;

FIG. 3 is a cross-sectional view of the semiconductor component of FIG.2 at a later stage of manufacture;

FIG. 4 is a cross-sectional view of the semiconductor component of FIG.3 at a later stage of manufacture;

FIG. 5 is a cross-sectional view of the semiconductor component of FIG.4 taken along the region of section line 5-5 in FIG. 6;

FIG. 6 is a top view of the semiconductor component of FIG. 4 at a laterstage of manufacture;

FIG. 7 is a cross-sectional view of the semiconductor component of FIG.6 at a later stage of manufacture;

FIG. 8 is a cross-sectional view taken along section line 8-8 of FIG.11, but at an earlier stage of manufacture;

FIG. 9 is a cross-sectional view taken along section line 9-9 of FIG.11, but at an earlier stage of manufacture;

FIG. 10 is a cross-sectional view of the semiconductor component of FIG.8 at a later stage of manufacture;

FIG. 11 is a top view of the semiconductor component of FIG. 9 at alater stage of manufacture;

FIG. 12 is top view of the semiconductor component of FIG. 11 at a laterstage of manufacture;

FIG. 13 is a cross-sectional view of a semiconductor component of FIG.17 taken along section line 18-18 of FIG. 17, but at an earlier stage ofmanufacture;

FIG. 14 is a cross-sectional view of the semiconductor component of FIG.13 at a later stage of manufacture;

FIG. 15 is a cross-sectional view of the semiconductor component of FIG.14 at a later stage of manufacture;

FIG. 16 is a cross-sectional view of a semiconductor component of FIG.17 taken along section line 19-19 of FIG. 17, but at an earlier stage ofmanufacture;

FIG. 17 is a top view of the semiconductor component of FIGS. 16, 18,and 19;

FIG. 18 is a cross-sectional view of the semiconductor component of FIG.17 taken along section line 18-18;

FIG. 19 is a cross-sectional view of the semiconductor component of FIG.17 taken along section line 19-19;

FIG. 20 is a cross-sectional view of the semiconductor component of FIG.18 at a later stage of manufacture;

FIG. 21 is a cross-sectional view of the semiconductor component of FIG.19 at a later stage of manufacture;

FIG. 22 is a cross-sectional view of the semiconductor component of FIG.20 at a later stage of manufacture;

FIG. 23 is a cross-sectional view of the semiconductor component of FIG.22 at a later stage of manufacture;

FIG. 24 is a cross-sectional view of the semiconductor component of FIG.22 at a different location and at a later stage of manufacture;

FIG. 25 is a cross-sectional view of the semiconductor component of FIG.23 at a later stage of manufacture;

FIG. 26 is a cross-sectional view of the semiconductor component of FIG.24 at a different location and at a later stage of manufacture;

FIG. 27 is a top view of the semiconductor components of FIGS. 25 and26;

FIG. 28 is a cross-sectional view taken along section line 31-31 of FIG.30 but at an earlier stage of manufacture;

FIG. 29 is a cross-sectional view taken along section line 32-32 of FIG.30 but at an earlier stage of manufacture;

FIG. 30 is a top view of the semiconductor component of FIGS. 28 and 29at a later stage of manufacture;

FIG. 31 is a cross-sectional view taken along section line 31-31 of FIG.30;

FIG. 32 is a cross-sectional view taken along section line 32-32 of FIG.30;

FIG. 33 is a top view of the semiconductor component of FIGS. 31 and 32at a later stage of manufacture;

FIG. 34 is a top view of a semiconductor component in accordance withanother embodiment of the present invention;

FIG. 35 is a cross-sectional view of the semiconductor component of FIG.34 taken along section line 35-35 of FIG. 34 but at an earlier stage ofmanufacture;

FIG. 36 is a cross-sectional view of the semiconductor component of FIG.34 taken along section line 36-36 of FIG. 34 but at an earlier stage ofmanufacture;

FIG. 37 is a cross-sectional view of the semiconductor component of FIG.35 at a later stage of manufacture;

FIG. 38 is a cross-sectional view of the semiconductor component of FIG.36 at a later stage of manufacture;

FIG. 39 is a cross-sectional view of the semiconductor component of FIG.37 at a later stage of manufacture;

FIG. 40 is a cross-sectional view of the semiconductor component of FIG.38 at a later stage of manufacture;

FIG. 41 is a cross-sectional view of the semiconductor component of FIG.39 at a later stage of manufacture;

FIG. 42 is a cross-sectional view of the semiconductor component of FIG.40 at a later stage of manufacture;

FIG. 43 is a cross-sectional view of the semiconductor component of FIG.41 at a later stage of manufacture; and

FIG. 44 is a cross-sectional view of the semiconductor component of FIG.42 at a later stage of manufacture.

For simplicity and clarity of the illustration, elements in the figuresare not necessarily to scale, and the same reference characters indifferent figures denote the same elements. Additionally, descriptionsand details of well-known steps and elements are omitted for simplicityof the description. As used herein current carrying electrode means anelement of a device that carries current through the device such as asource or a drain of an MOS transistor or an emitter or a collector of abipolar transistor or a cathode or an anode of a diode, and a controlelectrode means an element of the device that controls current flowthrough the device such as a gate of an MOS transistor or a base of abipolar transistor. Although the devices are explained herein as certainN-channel or P-Channel devices, or certain N-type of P-type dopedregions, a person of ordinary skill in the art will appreciate thatcomplementary devices are also possible in accordance with embodimentsof the present invention. It will be appreciated by those skilled in theart that the words during, while, and when as used herein are not exactterms that mean an action takes place instantly upon an initiatingaction but that there may be some small but reasonable delay, such as apropagation delay, between the reaction that is initiated by the initialaction. The use of the word approximately or substantially means that avalue of element has a parameter that is expected to be very close to astated value or position. However, as is well known in the art there arealways minor variances that prevent the values or positions from beingexactly as stated. It is well established in the art that variances ofup to about ten percent (10%) (and up to twenty percent (20%) forsemiconductor doping concentrations) are regarded as reasonablevariances from the ideal goal of exactly as described. For clarity ofthe drawings, doped regions of device structures are illustrated ashaving generally straight line edges and precise angular corners.However, those skilled in the art understand that due to the diffusionand activation of dopants the edges of doped regions generally may notbe straight lines and the corners may not be precise angles.

DETAILED DESCRIPTION

FIG. 1 is a cross-sectional view of an integrated common mode choke 10at a beginning stage of manufacture in accordance with an embodiment ofthe present invention. What is shown in FIG. 1 is a semiconductormaterial 12 having a major surface 14. In accordance with an embodiment,semiconductor material 12 is silicon doped with an impurity material ofP-type conductivity such as, for example, boron. By way of example, theresistivity of semiconductor material 12 ranges from about 0.001Ohm-centimeters (Ω-cm) to about 10,000 Ω-cm. Although semiconductormaterial 12 may be a high resistivity substrate, the resistivity ordopant concentration of semiconductor material 12 is not a limitation.Likewise, semiconductor 12 is not limited to being a silicon substrateand the conductivity type of substrate 12 is not limited to being P-typeconductivity. It should be understood that an impurity material is alsoreferred to as a dopant or impurity species. Other suitable materialsfor substrate 12 include polysilicon, germanium, silicon germanium,Semiconductor-On-Insulator (“SOI”) material, an epitaxial layer formedon a bulk silicon material, and the like. In addition, substrate 12 canbe comprised of a compound semiconductor material such as Group III-Vsemiconductor materials, Group II-VI semiconductor materials, etc.

Optionally, a transient voltage suppression structure 16 may be formedfrom substrate 12.

A layer of dielectric material 18 having a thickness ranging from about1,000 Angstroms (Å) to about 60,000 Å is formed on surface 14. Inaccordance with an embodiment, dielectric material 18 is formed by thedecomposition of tetraethylorthosilicate (“TEOS”) to form an oxide layerhaving a thickness of about 8,000 Å. A dielectric layer formed in thismanner is typically referred to as TEOS or a TEOS layer. The type ofmaterial for dielectric layer 18 is not a limitation of the presentinvention. A layer of photoresist is formed on TEOS layer 18 andpatterned to have openings 20 and 22 that expose portions of TEOS layer18. The remaining portions of the photoresist layer serve as a maskingstructure 24.

Referring now to FIG. 2, openings are formed in the exposed portions ofdielectric layer 18 using, for example, an anisotropic reactive ionetch. The openings expose portions of transient voltage suppressionstructures 16 formed in semiconductor substrate 12 and portion 26 ofsubstrate 12. Masking structure 24 is removed. A layer of refractorymetal (not shown) is conformally deposited over the exposed portions oftransient voltage suppression structures 16, portion 26 of substrate 12,and over dielectric layer 18. By way of example, the refractory metal isnickel, having a thickness ranging from about 50 Å to about 150 Å. Therefractory metal is heated to a temperature ranging from about 350degrees Celsius (° C.) to about 500° C. The heat treatment causes thenickel to react with the silicon to form nickel silicide (NiSi) in allregions in which the nickel is in contact with silicon. Thus, nickelsilicide regions 28 are formed from portions of transient voltagesuppression structures 16 and a nickel silicide region 30 is formed fromportion 26 of substrate 12. The portions of the nickel over dielectriclayer 18 remain unreacted. After formation of the nickel silicideregions, any unreacted nickel is removed. It should be understood thatthe type of silicide is not a limitation of the present invention. Forexample, other suitable silicides include titanium silicide (TiSi),platinum silicide (PtSi), cobalt silicide (CoSi₂), or the like. As thoseskilled in the art are aware, silicon is consumed during the silicideformation and the amount of silicon consumed is a function of the typeof silicide being formed.

Referring now to FIG. 3, layer of titanium 32 having a thickness rangingfrom about 25 Å to about 200 Å is formed on dielectric layer 18 and inthe openings formed in dielectric layer 18. A layer of titanium nitride34 having a thickness ranging from about 75 Å to about 600 Å is formedon titanium layer 32. A layer of aluminum 36 having thickness rangingfrom about 5,000 Å to about 40,000 Å is formed on titanium nitride layer34. By way of example aluminum layer 36 has a thickness of about 20,000Å. A layer of titanium nitride 38 having a thickness ranging from about400 Å to about 900 Å is formed on aluminum layer 36. Layers 32, 34, 36,and 38 may be formed using Chemical Vapor Deposition (“CVD”), PlasmaEnhanced Chemical Vapor Deposition (“PECVD”), sputtering, evaporation,or the like. It should be understood that the materials of layers 32,34, and 36 are not limitations of the present invention. Other suitablematerials for layer 32 include tantalum, tungsten, platinum, arefractory metal compound, a refractory metal carbide, a refractorymetal boride, or the like. Other suitable materials for layer 34include, tantalum nitride, a metal nitride doped with carbon, a metalnitride doped with silicon, or the like. Other suitable materials forlayer 36 include gold, silver, an aluminum alloy, or the like.

A layer of photoresist is formed on titanium nitride layer 38 andpatterned to have openings 40 that expose portions of titanium nitridelayer 38. The remaining portions of the photoresist layer serve as amasking structure 42.

Referring now to FIG. 4, the exposed portions of titanium nitride layer38 and the portions of layers 36, 34, and 32 under the exposed portionsof titanium nitride layer 38 are anisotropically etched using, forexample, a reactive ion etch. Dielectric layer 18 serves as an etch stoplayer. After anisotropically etching layers 38, 36, 34, and 32, contacts46 remain that are in contact with transient voltage suppression regions16, and a contact 48 remains in contact with, for example, an activedevice formed from substrate 12. It should be understood that contacts46 and 48 are comprised of portions of layers 32-38.

A passivation layer 50 having a thickness ranging from about 0.1micrometers (μm) to about 3 μm is formed on dielectric layer 18 andcontacts 46 and 48. Suitable materials for passivation layer 50 includesilicon oxide, silicon nitride, or the like. A layer of dielectricmaterial 52 having a thickness ranging from about 1 μm to about 20 μm isformed on passivation layer 50. By way of example, layer 52 is a TEOSlayer. A seed layer 54 having a thickness ranging from about 100 Å toabout 1 μm is formed on dielectric material 52. By way of example, seedlayer 54 is a titanium copper layer. A layer of electrically conductivematerial 56 such as, for example, copper having a thickness ranging fromabout 1 μm to about 20 μm is formed on seed layer 54. A layer ofphotoresist is formed on copper layer 56 and patterned to have openings58 that expose portions of copper layer 56. The remaining portions ofthe photoresist layer serve as a masking structure 60.

Referring now to FIG. 5, the exposed portions of electrically conductivelayer 56 are anisotropically etched using, for example, a reactive ionetch and an etch chemistry that preferentially etches, for example,copper. The etch stops on dielectric layer 52. After the etch, portions56A, 56B, 56C, and 56D of electrically conductive layer 56 remainforming a portion 62 of a coil or inductor 64. It should be noted thatFIG. 5 is a cross-sectional view taken along section line 5-5 of FIG. 6and that reference characters 56A₁, 56B₁, 56C₁, and 56D₁ are furtherdescribed with reference to FIG. 6. Masking structure 60 is removed.

Referring now to FIG. 6, a top view of portions 56A, 56B, 56C, and 56Dof inductor 64 is illustrated. Portion 56A includes end regions 56A₁ and56A₂ and a body region 56A₃, portion 56B includes end regions 56B₁ and56B₂ and a body region 56B₃, portion 56C includes end regions 56C₁ and56C₂ and a body region 56C₃, and portion 56D includes end regions 56D₁and 56D₂ and a body region 56D₃. It should be noted that in crosssection end regions 56A₂, 56B₂, 56C₂, and 56D₂ look similar to endregions 56A₁, 56B₁, 56C₁, and 56D₁, respectively, shown in FIG. 5.

Referring now to FIG. 7, a layer of dielectric material 66 having athickness ranging from about 2 μm to about 20 μm is formed on portions56A, 56B, 56C, and 56D of coil 64 and on the exposed portions of TEOSlayer 52. By way of example, layer 66 is a TEOS layer. A layer ofphotoresist is formed on dielectric layer 66 and patterned to haveopenings 68 that expose portions of dielectric layer 66. The remainingportions of the photoresist layer serve as a masking structure 70.

Referring now to FIGS. 8 and 9, the exposed portions of dielectric layer66 are anisotropically etched using, for example, a reactive ion etchand an etch chemistry that preferentially etches the dielectric materialof dielectric layer 66. It should be noted that FIGS. 8 and 9 arecross-sectional views taken along section lines 8-8 and 9-9,respectively, of FIG. 11, but at an earlier stage of manufacture. Theetch forms openings 72 in dielectric layer 66. Openings 72 exposeportions 56A-56D of coil 64. Masking structure 70 is removed. A barrierlayer 74 is formed along the sidewalls of openings 72 and over theexposed portions of dielectric layer 66. By way of example, barrierlayer 74 is titanium nitride. The material for barrier layer 74 is not alimitation of the present invention. A layer of electrically conductivematerial 76 is formed over barrier layer 74. Suitable materials forelectrically conductive material 76 include copper, gold, silver,aluminum, an aluminum alloy, or the like.

A layer of photoresist is formed on electrically conductive layer 76 andpatterned to have openings 78 that expose portions of electricallyconductive layer 76. The remaining portions of the photoresist layerserve as a masking structure 80.

Referring now to FIG. 10, the exposed portions of electricallyconductive layer 76 are anisotropically etched using, for example, areactive ion etch and an etch chemistry that preferentially etches thematerial of electrically conductive layer 76, e.g., copper when layer 76is copper. FIG. 10 is a cross-sectional view of semiconductor component10 of FIG. 8 at a later stage. Thus, FIG. 10 is a cross-sectional viewtaken along section line 8-8 of FIG. 11. The etch stops on dielectriclayer 66. After the etch, portions 76A₁, 76B₁, 76C₁, 76D₁, 76E₁, 76F₁,76G₁, 76H₁, 76A₂, 76B₂, 76C₂, 76D₂, 76E₂, 76F₂, 76G₂, 76H₂, 76I, and 76Jof electrically conductive layer 76 remain. Portions 76A₂, 76B₂, 76C₂,76D₂, 76E₂, 76F₂, 76G₂, 76H₂ are illustrated with reference to FIG. 11.Portions 76A₁, 76B₁, 76C₁, and 76D₁ are over portions 56A₁, 56B₁, 56C₁,and 56D₁, respectively, and serve as contacts to coil 64. Portions 76E₁,76F₁, 76G₁, and 76H₁ form a portion 82 of a coil or inductor 84. Maskingstructure 80 is removed. Portions 76I and 76H₁ serve as terminals forcoil 84 and portions 76A₁ and 76J serve as terminals for coil 64. Alayer of dielectric material 86 is formed on the exposed portions ofdielectric material 66.

Referring now to FIG. 11, a top view of portions 56A, 56B, 56C, and 56Dof coil 64 is illustrated as broken lines and portions 76E, 76F, 76G,and 76H of coil 84 are shown as solid lines. FIG. 11 further illustratescontacts 76A₁, 76B₁, 76C₁, and 76D₁, and terminals 76I and 76J that areillustrated in FIG. 10. In addition, FIG. 11 illustrates contacts 76A₂,76B₂, 76C₂, and 76D₂ that are formed along with contacts 76A₁, 76B₁,76C₁, and 76D₁. It should be noted that contacts 76A₁, 76B₁, 76C₁, 76D₁contact one end of coil portions 56A, 56B, 56C, and 56D andinterconnects 76A₂, 76B₂, 76C₂, 76D₂ contact an opposing end of coilportions 56A, 56B, 56C, and 56D, respectively. Similarly, FIG. 11illustrates contact portions 76E₁, 76F₁, 76G₁, and 76H₁ and contactportions 76E₂, 76F₂, 76G₂, and 76H₂ that serve as contact portions of anopposing ends of coil portions 76E, 76F, 76G, and 76H, respectively.

Referring now to FIG. 12, terminal 76I is coupled to contact 76E₂ via abonding wire 90, contact 76E₁ is coupled to contact 76F₂ via a bondingwire 92, contact 76F₁ is coupled to contact 76G₂ via a bonding wire 94,contact 76G₁ is coupled to contact 76H₂ via a bonding wire 96. Contact76B₁ is coupled to contact 76A₂ via a bonding wire 100, contact 76C₁ iscoupled to contact 76B₂ via a bonding wire 102, contact 76D₁ is coupledto contact 76C₂ via a bonding wire 104, and terminal 76J is coupled tocontact 76D₂ via a bonding wire 106. Contact 76A₁ and terminal 76J serveas input and output terminals of a coil 64 and terminal 76I and contact76H₁ serve as input and output terminals of a coil 84. Coils 64 and 84cooperate to form a common mode choke.

FIG. 13 is a cross-sectional view of a semiconductor component 200 takenalong section line 18-18 of FIG. 17, but at an earlier stage ofmanufacture, in accordance with another embodiment. What is shown inFIG. 13 is semiconductor material 12 having major surface 14.Semiconductor material 12 has been described with reference to FIG. 1.Transient voltage suppression structures 202 and 204 may be formed in orfrom semiconductor material 12. In addition, active devices (not shown)such as, for example, transistors, diodes, or the like and passivedevices (not shown) such as, for example, resistors, capacitors,inductors, or the like may be formed in or from semiconductor material12. A dielectric structure 206 is formed over semiconductor material 12.By way of example, dielectric structure 206 is a multi-layer dielectricstructure comprising: a screen oxide layer 208 formed over or fromsemiconductor material 12, a reoxidation layer 210 formed on or fromscreen oxide layer 208, an undoped silicate glass (USG) layer 212 formedon reoxidation layer 210, and a boro-phospho silicate glass layer 214formed over USG layer 212. It should be understood that the number oflayers of insulating material, the thicknesses of the layers ofinsulating material, and the methods for forming the insulating layersof dielectric structure 206 are not limitations. Thus, dielectricstructure 206 may be comprised of one, two, three, or more layers ofdielectric material. A layer of photoresist is formed on dielectriclayer 214 and patterned to have openings 216 and 218 that exposeportions of dielectric layer 214 of dielectric structure 206. Theremaining portions of the photoresist layer serve as a masking structure220.

Referring now to FIG. 14, the portions of dielectric structure 206exposed by openings 216 and 218 are removed using, for example, ananisotropic reactive ion etch to expose portions of transient voltagesuppression devices 202 and 204. An electrically conductive barrierstructure 222 having a thickness ranging from about 1,000 Å to about10,000 Å is formed along the exposed portions of dielectric layers208-214 and on the exposed portions of semiconductor material 12 inwhich transient voltage suppression devices 202 and 204 are formed. Byway of example, electrically conductive barrier structure 222 iscomprised of a layer of titanium nitride 224 formed on the exposedportions of dielectric layers 208-214 and semiconductor material 12 anda layer of titanium 226 formed on titanium nitride layer 224. Suitabletechniques for forming titanium nitride layer 224 and titanium layer 226include sputtering, Chemical Vapor Deposition (CVD), Plasma EnhancedChemical Vapor Deposition (PECVD, evaporation, or the like. The materialfor layers 224 and 226 are not limited to being titanium nitride andtitanium, respectively. Other suitable materials for layer 224 includetantalum nitride, tungsten nitride, or the like, and other suitablematerials for layer 226 include tantalum, a combination of tantalum andtantalum nitride, tungsten, refractory metal compounds such as, forexample, refractory metal nitrides, refractory metal carbides,refractory metal borides, or the like.

A layer of electrically conductive material 228 such as for example,aluminum is formed on titanium nitride layer 226. Techniques for formingaluminum layer 228 include sputtering, evaporation, plasma deposition,or the like. Electrically conductive layer 228 is not limited to beingaluminum. Other suitable electrically conductive materials for layer 228include copper, nickel, or the like. A layer of photoresist is formed onaluminum layer 228 and patterned to have one or more openings 230 thatexpose one or more portions of aluminum layer 228. The remainingportions of the photoresist layer serve as a masking structure 232.

Referring now to FIG. 15, the exposed portion or portions of aluminumlayer 228 and the portions of titanium nitride layer 226 and titaniumlayer 224 that are below the exposed portion or portions of aluminumlayer 228 are anisotropically etched using, for example, a reactive ionetch and etch chemistries suitable for etching aluminum, titanium, andtitanium nitride. It should be noted that FIG. 15 is a cross-sectionalview of semiconductor component 200 taken along section line 18-18 ofFIG. 17, but at an earlier stage of manufacture. Etching the exposedportion of aluminum layer 228 and the portions of titanium nitride layer226 and titanium layer 224 that are below the exposed portion ofaluminum layer 228 exposes a portion of dielectric structure 206. Thus,the etch forms a contact structure 234 that electrically contactstransient voltage suppression device 202 and a contact structure 236that electrically contacts transient voltage suppression device 204.Masking structure 232 is removed.

Still referring to FIG. 15, a passivation layer 238 is formed on or overelectrical contact structures 234 and 236 and on the exposed portion ofdielectric structure 206. By way of example, passivation layer 238 issilicon nitride (Si₃N₄). Other suitable materials for passivation layer238 include silicon dioxide, or the like. A passivation layer 240 havinga thickness ranging from about 2 μm to about 20 μm is formed onpassivation layer 238. By way of example, passivation layer 240 ispolyimide. A layer of photoresist (not shown) is formed on passivationlayer 240 and patterned to have openings that expose portions ofpassivation layer 240 that are over transient voltage suppressiondevices 202 and 204. The remaining portions of the photoresist layerserve as a masking structure.

The exposed portions of passivation layer 240 and the portions ofpassivation layer 238 that are between the exposed portions ofpassivation layer 240 and transient voltage suppression devices 202 and204 are anisotropically etched to expose portions of contact structures234 and 236. The masking structure is removed. An electricallyconductive barrier structure 241 having a thickness ranging from about0.1 μm to about 1 μm is formed along the exposed portions of passivationlayers 226 and 228 and on the exposed portions of contact structures 234and 236. By way of example, the electrically conductive barrierstructure is comprised of a layer of titanium nitride 242 formed on theexposed portions of passivation layers 238 and 240 and the exposedportions of contact structures 234 and 236 and a layer of titanium 244is formed on titanium nitride layer 242. Suitable techniques for formingtitanium nitride layer 242 and titanium layer 244 include sputtering,Chemical Vapor Deposition (CVD), Plasma Enhanced Chemical VaporDeposition (PECVD), evaporation, or the like. The material for layers242 and 244 are not limited to being titanium nitride and titanium,respectively. Other suitable materials for layer 242 include tantalumnitride, tungsten nitride, or the like, and other suitable materials forlayer 244 include tantalum, a combination of tantalum and tantalumnitride, tungsten, refractory metal compounds such as, for example,refractory metal nitrides, refractory metal carbides, refractory metalborides, or the like. A layer of photoresist is formed on titanium layer244 and patterned to have openings 246A, 246B, 246C, 246D, and 247 thatexpose portions of titanium layer 244. The remaining portions of thephotoresist layer serve as a masking structure 248.

FIG. 16 is a cross-sectional view taken along section line 19-19 of FIG.17 but at an earlier stage of manufacture. What is shown in FIG. 16 is aportion of semiconductor component 200 in which contact structures areabsent. More particularly, FIG. 16 illustrates dielectric structure 206,passivation layers 238 and 240, barrier structure 241, openings246A-246D, and portions of masking structure 248. It should be notedthat FIGS. 15 and 16 represent the same stage of the manufacture ofsemiconductor component 200, but at different locations.

Referring now to FIG. 17, an electrically conductive material is formedon the exposed portions of titanium nitride layer 244 in openings 246A,246B, 246C, 246D, and 247 to form electrically conductive strips 252A,252B, 252C, and 252D, respectively. It should be noted that FIG. 17 is atop view of semiconductor component 200 that further illustrates theregions through which section lines 18-18 and 19-19 are taken and thatreference characters “A,” “B,” “C,” and “D” have been appended toreference character 246 to distinguish in which openings theelectrically conductive material is formed. Electrically conductivestrip 252A has ends 252A₁ and 252A₂ and a body 252A₃, electricallyconductive strip 252B has ends 252B₁ and 252B₂ and a body 252B₃,electrically conductive strip 252C has ends 252C₁ and 252C₂ and a body252C₃, and electrically conductive strip 252D has ends 252D₁ and 252D₂and a body 252D₃. By way of example, the electrically conductivematerial is copper formed using an electroplating technique. Thetechnique for forming electrically conductive strips 252A, 252B, 252C,and 252D, the electrically conductive material of electricallyconductive strips 252A, 252B, 252C, and 252D, and the number ofelectrically conductive strips that are formed are not limitations.Other suitable techniques for forming electrically conductive strips252A, 252B, 252C, and 252D include sputtering, evaporation, wet-etching,dry-etching, or the like and other suitable materials for electricallyconductive strips 252A, 252B, 252C, and 252D include gold, aluminum,silver, or the like. It should be noted that electrically conductivestrips 252A, 252B, 252C, and 252D serve as portions or elements of acoil or inductor.

FIG. 18 is a cross-sectional view of semiconductor component 200 takenalong section line 18-18 of FIG. 17. FIG. 18 further illustrates ends252A₁, 252B₁, 252C₁, and 252D₁, and a contact extension 253 formed ontitanium layer 244.

FIG. 19 is a cross-sectional view of semiconductor component 200 takenalong section line 19-19 of FIG. 17. What is shown in FIG. 19 areportions of dielectric structure 206, passivation layers 238 and 240,barrier structure 241, and electrically conductive strips 252A, 252B,252C, and 252D, respectively. It should be noted that FIGS. 18 and 19represent the same stage of the manufacture of semiconductor component200, but at different locations.

FIGS. 20 and 21 are cross-sectional views of semiconductor component 200of FIGS. 18 and 19, respectively, taken at a subsequent step. What isshown in FIGS. 20 and 21 is semiconductor component 200 after theremoval of masking structure 248. It should be noted that the top viewof semiconductor component 200 at the processing step illustrated byFIGS. 20 and 21 looks similar to that of FIG. 17. It should be notedthat FIGS. 20 and 21 represent the same stage of the manufacture ofsemiconductor component 200, but at different locations.

FIG. 22 is a cross-sectional view of semiconductor component 200 of FIG.20 at a later stage of manufacture. What is shown in FIG. 22 issemiconductor component 200 after the removal of the portions ofelectrically conductive layers 244 and 242 that were exposed by theremoval of masking structure 248. It should be noted that the top viewof semiconductor component 200 at the processing step illustrated byFIG. 22 looks similar to that of FIG. 17.

Referring now to FIGS. 23 and 24, a passivation layer 260 is formed onor over electrically conductive strips 252A, 252B, 252C, and 252D and onthe exposed portions of passivation layer 240. It should be noted thatFIGS. 23 and 24 represent the same stage of the manufacture ofsemiconductor component 200, but at different locations. By way ofexample, passivation layer 260 is polyimide. Other suitable materialsfor passivation layer 260 include silicon dioxide, silicon nitride, orthe like. A layer of photoresist (not shown) is formed on polyimidelayer 260 and patterned to have openings 262A, 262B, 262C, and 262D thatexpose portions of polyimide layer 260 that are over end portions 252A₁,252B₁, 252C₁, and 252D₁ and over end portions 252A₂, 252B₂, 252C₂, and252D₂, respectively, and an opening 263 over contact extension 253. Theremaining portions of the photoresist layer serve as a masking structure266.

Referring now to FIGS. 25 and 26, the exposed portions of polyimidelayer 260 are anisotropically etched to expose end portions 252A₁,252B₁, 252C₁, and 252D₁ of electrically conductive strips 252A, 252B,252C, and 252D, respectively, end portions 252A₂, 252B₂, 252C₂, and252D₂ (not shown in FIGS. 25 and 26) of electrically conductive strips252A, 252B, 252C, and 252D, respectively, and contact extension 253. Themasking structure is removed. An electrically conductive barrierstructure 270 having a thickness ranging from about 0.1 μm to about 1 μmis formed along the exposed portions of passivation layer 260 and on endportions 252A₁, 252B₁, 252C₁, and 252D₁ and end portions 252A₂, 252B₂,252C₂, and 252D₂ of electrically conductive strips 252A, 252B, 252C, and252D, respectively, and on contact extension 253. By way of example,electrically conductive barrier structure 270 is comprised of a layer oftitanium nitride 272 and a layer of titanium 274, where the titaniumnitride layer is formed on the exposed portions of passivation layer260, the exposed portions of end portions 252A₁, 252B₁, 252C₁, and 252D₁and 252A₂, 252B₂, 252C₂, and 252D₂ of electrically conductive strips252A, 252B, 252C, and 252D, respectively, and on contact extension 253.Titanium layer 274 is formed on titanium nitride layer 272. Suitabletechniques for forming titanium nitride layer 272 and titanium layer 274include sputtering, Chemical Vapor Deposition (CVD), Plasma EnhancedChemical Vapor Deposition (PECVD, evaporation, or the like. The materialfor layers 272 and 274 are not limited to being titanium nitride andtitanium, respectively. Other suitable materials for layer 272 includetantalum nitride, tungsten nitride, or the like, and other suitablematerials for layer 274 include tantalum, a combination of tantalum andtantalum nitride, tungsten, refractory metal compounds such as, forexample, refractory metal nitrides, refractory metal carbides,refractory metal borides, or the like.

A layer of photoresist is formed on titanium layer 274 and patterned tohave openings (not shown) that expose portions of barrier layer 270 onend portions 252A₁, 252B₁, 252C₁, 252D₁, 252A₂, 252B₂, 252C₂, and 252D₂of electrically conductive strips 252A, 252B, 252C, and 252D,respectively, and contact extension 253. In addition, openings areformed to expose portions of barrier layer 270 that are on the portionsof polyimide layer 260 that are between electrically conductive strips252A and 252B, the portions of barrier layer 270 that are on theportions of polyimide layer 260 that are between electrically conductivestrips 252B and 252C, the portions of barrier layer 270 that are on theportions of polyimide layer 260 that are between electrically conductivestrips 252C and 252D, and the portions of barrier layer 270 that are onthe portions of polyimide layer 260 that are laterally adjacent toelectrically conductive strip 252D. The remaining portions of thephotoresist layer serve as a masking structure 278.

Briefly referring to FIG. 27, an electrically conductive material formedon the exposed portions of titanium nitride layer 274 to formelectrically conductive strips 282A, 282B, 282C, and 282D, respectively,is shown. It should be noted that FIG. 27 is a top view of semiconductorcomponent 200 that further illustrates the regions through which sectionlines 28-28 and 29-29 are taken and that reference characters “A,” “B,”“C,” and “D” have been appended to reference character 282 todistinguish the electrically conductive strips. Electrically conductivestrip 282A has ends 282A₁ and 282A₂ and a body 282A₃, electricallyconductive strip 282B has ends 282B₁ and 282B₂ and a body 282B₃,electrically conductive strip 282C has ends 282C₁ and 282C₂ and a body282C₃, and electrically conductive strip 282D has ends 282D₁ and 282D₂and a body 282D₃. By way of example, the electrically conductivematerial is copper formed using an electroplating technique. Thetechnique for forming electrically conductive strips 282A, 282B, 282C,and 282D, the electrically conductive material of electricallyconductive strips 282A, 282B, 282C, and 282D, and the number ofelectrically conductive strips that are formed are not limitations.Other suitable materials for electrically conductive strips 282A, 282B,282C, and 282D include aluminum, gold, silver, or the like. It should benoted that electrically conductive strips 282A, 282B, 282C, and 282Dserve as portions or elements of a coil or inductor.

Referring again to FIGS. 25 and 26, cross-sectional views of endportions 282A₁, 282B₁, 282C₁, and 282D₁, contact portions 290A₁, 290B₁,290C₁, and 290D₁, and body portions 282A₃, 282B₃, 282C₃, and 282D₃ areillustrated. It should be noted that a top view of end portions 282A₁,282B₁, 282C₁, and 282D₁, contact portions 290A₁, 290B₁, 290C₁, and290D₁, and body portions 282A₃, 282B₃, 282C₃, and 282D₃ are shown inFIG. 27.

Referring now to FIGS. 28 and 29, masking structure 278 is removed and apassivation layer 300 is formed on or over contact portions 290A₁,290B₁, 290C₁, and 290D₁, electrically conductive strips 282A, 282B,282C, and 282D, and the exposed portions of polyimide layer 260. By wayof example, passivation layer 300 is polyimide. Other suitable materialsfor passivation layer 300 include silicon dioxide, silicon nitride, orthe like. A layer of photoresist (not shown) is formed on polyimidelayer 300 and patterned to have openings that expose the portions ofpolyimide layer 300 that are over contact portions 290A₁, 290B₁, 290C₁,and 290D₁ and over contact portions 290A₂, 290B₂, 290C₂, and 290D₂(shown in FIG. 27) and openings over end portions 282A₁, 282B₁, 282C₁,and 282D₁ and end portions 282A₂, 282B₂, 282C₂, and 282D₂ (shown in FIG.27) of electrically conductive strips 282A, 282B, 282C, and 282D,respectively. The remaining portions of the photoresist layer serve as amasking structure. It should be noted that FIGS. 28 and 29 arecross-sectional views taken along section lines 31-31 and 32-32 of FIG.30, but at an earlier stage of manufacture.

Still referring to FIGS. 28 and 29, the exposed portions of polyimidelayer 300 are anisotropically etched to expose contact portions 290A₁,290B₁, 290C₁, and 290D₁, contact portions 290A₂, 290B₂, 290C₂, and290D₂, and end portions 282A₁, 282B₁, 282C₁, and 282D₁ and end portions282A₂, 282B₂, 282C₂, and 282D₂ of electrically conductive strips 282A,282B, 282C, and 282D, respectively. The masking structure is removed. Anelectrically conductive barrier structure 302 is formed along theexposed portions of passivation layer 300 and on the exposed portions ofcontact portions 290A₁, 290B₁, 290C₁, and 290D₁, contact portions 290A₂,290B₂, 290C₂, and 290D₂, end portions 282A₁, 282B₁, 282C₁, and 282D₁,and end portions 282A₂, 282B₂, 282C₂, and 282D₂. By way of example, theelectrically conductive barrier structure is comprised of a layer oftitanium nitride 304 and a layer of titanium 306, where titanium nitridelayer 304 is formed on passivation layer 300, the exposed portions ofcontact portions 290A₁, 290B₁, 290C₁, and 290D₁, contact portions 290A₂,290B₂, 290C₂, and 290D₂, end portions 282A₁, 282B₁, 282C₁, and 282D₁ andend portions 282A₂, 282B₂, 282C₂, and 282D₂. Titanium layer 306 isformed on titanium nitride layer 304. Suitable techniques for formingtitanium nitride layer 304 and titanium layer 306 include sputtering,Chemical Vapor Deposition (CVD), Plasma Enhanced Chemical VaporDeposition (PECVD, evaporation, or the like. The material for layers 304and 306 are not limited to being titanium nitride and titanium,respectively. Other suitable materials for layer 304 include tantalumnitride, tungsten nitride, or the like, and other suitable materials forlayer 306 include tantalum, a combination of tantalum and tantalumnitride, tungsten, refractory metal compounds such as, for example,refractory metal nitrides, refractory metal carbides, refractory metalborides, or the like.

A layer of photoresist is formed on titanium layer 306 and patterned tohave openings (not shown) that expose portions of barrier structure 302on contact portions 290A₁, 290B₁, 290C₁, 290D₁, 290A₂, 290B₂, 290C₂, and290D₂, and end portions 282A₁, 282B₁, 282C₁, 282D₁, 282A₂, 282B₂, 282C₂,and 282D₂ of electrically conductive strips 282A, 282B, 282C, and 282D,respectively. In addition, openings are formed to expose portions ofbarrier structure 302 that are on the portions of polyimide layer 300that are between contact portions 290A₁ and 290B₁, between contactportions 290B₁ and 290C₁, between contact portions 290C₁ and 290D₁, andon the portion of polyimide layer laterally adjacent contact portion290D₁. The remaining portions of the photoresist layer serve as amasking structure 310.

An electrically conductive material is formed on the exposed portions ofbarrier structure 302 to form contacts 312A₁, 312B₁, 312C₁, 312D₁,314A₁, 314B₁, 314C₁, 314D₁, and terminals 316 and 318. It should benoted that contact 312A₁ includes contact portions 290A₁ and 252A₁,contact 312B₁ includes contact portions 290B₁ and 252B₁, contact 312C₁includes contact portions 290C₁ and 252C₁, contact 312D₁ includescontact portions 290D₁ and 252D₁. It should be further understood thatcontacts 312A₂, 312B₂, 312C₂, 312D₂, 314A₂, 314B₂, 314C₂, and 314D₂shown in FIG. 30 have similar structures to contacts 312A₁, 312B₁,312C₁, 312D₁, 314A₁, 314B₁, 314C₁, 314D₁.

FIG. 30 is a top view of semiconductor component 200 after removal ofmasking structure 310 and the portions of barrier structure 302 exposedby the removal of masking structure 310. What is shown in FIG. 30 areelectrically conductive strips 282A, 282B, 282C, and 282D including endportions 282A₁, 282B₁, 282C₁, 282D₁, 282A₂, 282B₂, 282C₂, and 282D₂ andbody portions 282A₃, 282B₃, 282C₃, 282D₃, contacts 312A₁, 312B₁, 312C₁,312D₁, 312A₂, 312B₂, 312C₂, and 312D₂, 314A₁, 314B₁, 314C₁, 314D₁,314A₂, 314B₂, 314C₂, and 314D₂, and terminals 316 and 318. In addition,FIG. 30 illustrates electrically conductive strips 252A, 252B, 252C, and252D as broken lines.

FIGS. 31 and 32 are cross-sectional views of semiconductor component 200taken along section lines 31-31 and 32-32 of FIG. 30. The descriptionsof FIGS. 31 and 32 follows from those of FIGS. 28 and 29, respectively.Masking structure 310 is removed and the portions of barrier structure302 exposed by the removal of masking structure 310 are removed using,for example, an anisotropic reactive ion etch.

Referring now to FIG. 33, terminal 316 is coupled to contact 314A₂ via abonding wire 330, contact 314A₁ is coupled to contact 314B₂ via abonding wire 332, contact 314B₁ is coupled to contact 314C₂ via bondingwire 334, contact 314C₁ is coupled to contact 314D₂ via a bonding wire336. Contact 312B₁ is coupled to contact 312A₂ via a bonding wire 340,contact 312C₁ is coupled to contact 312B₂ via a bonding wire 342,contact 312D₁ is coupled to contact 312C₂ via a bonding wire 344, andterminal 318 is coupled to contact 312D₂ via a bonding wire 346. Contact312A₁ and terminal 318 serve as input and output terminals of a coil 320and terminal 316 and contact 314D₁ serve as input and output terminalsof a coil 322. Coils 320 and 322 cooperate to form a common mode choke.Bonding wires are also referred to as wirebonds.

FIG. 34 is a top view of a semiconductor component 400 in accordancewith another embodiment of the present invention. What is shown in FIG.34 is a top view of a common mode choke 402 comprising a coil 404 havingterminals 406 and 408 and a coil 410 having terminals 412 and 414.Terminals 406 and 408 are coupled to bond pads 416 and 418 thoughinterconnects 426 and 428, respectively, and terminals 412 and 414 arecoupled to bond pads 422 and 424 through interconnects 430 and 432,respectively. FIG. 34 further shows transient voltage suppressiondevices 436 and 438 coupled to terminals 408 and 414 throughinterconnects 428 and 432, respectively. In addition, transient voltagesuppression devices (not shown) may be coupled to terminals 406 and 412.Alternatively, transient voltage suppression devices may be coupled toterminals 406 and 412 rather than to terminals 408 and 414.

FIG. 35 is a cross-sectional view of a portion of semiconductorcomponent 400 taken along section line 35-35 of FIG. 34, but at anearlier stage of manufacture in accordance with another embodiment ofthe present invention. What is shown in FIG. 35 is semiconductormaterial 12 having major surface 14. Semiconductor material 12 has beendescribed with reference to FIG. 1. In addition, FIG. 35 illustrates atransient voltage suppression device, a dielectric structure 206,electrically conductive layers 224, 226, and 228, and a passivationlayer 238, which have been described with reference to FIGS. 13 and 14.The transient voltage suppression device is identified by referencecharacter 438 and may be similar to transient voltage suppression device202 described with reference to FIGS. 13 and 14. Electrically conductivelayers 224, 226, and 228 have been etched to form interconnectstructures 430 and 432. Typically transient voltage suppression device438 is connected to interconnect structure 432 through an electricalinterconnect (not shown). A layer of photoresist is formed onpassivation layer 238 and patterned to have openings 454 and 456 thatexpose portions of passivation layer 238. The remaining portions of thephotoresist layer serve as a masking structure 458.

FIG. 36 is a cross-sectional view of a portion of semiconductorcomponent 400 taken along section line 36-36 of FIG. 34, but at anearlier stage of manufacture. FIG. 36 further illustrates openings 460and 462 formed in the layer of photoresist described in FIG. 35. Itshould be noted that in accordance with the alternative embodiment,openings such as openings 460 and 462 are formed in passivation layer238 because it is a photosensitive material and assumes the function ofthe photoresist layer and masking structure 458. A transient voltagesuppression device 436 is illustrated in FIG. 36 and may be similar totransient voltage suppression device 202 described with reference toFIGS. 13 and 14. Electrically conductive layers 224, 226, and 228 havebeen etched to form interconnect structures 453 and 455. Typicallytransient voltage suppression device 436 is connected to interconnectstructure 453 through an electrical interconnect (not shown). It shouldbe noted that FIGS. 35 and 36 represent the same stage of themanufacture of semiconductor component 400, but at different locations.FIG. 36 illustrates transient voltage suppression device 436.

FIGS. 37 and 38 are cross-sectional views of semiconductor component 400of FIGS. 35 and 36, respectively, at a later stage of manufacture.Openings are formed in passivation layer 238 to expose portions ofinterconnect structures 450 and 452 and a polyimide layer 240 is formedover passivation layer 238 and in the openings that expose the portionsof interconnect structures 450 and 452. Openings are formed in polyimidelayer 240 to re-expose the portions of interconnect structures 450 and452. An electrically conductive barrier structure 241 is formed overpolyimide layer 240 and in the openings exposing interconnect structures450 and 452. Techniques for forming polyimide layer 240, openings inpolyimide layer 240, and electrically conductive barrier structure 241have been described with reference to FIG. 15. A layer of photoresist isformed on polyimide layer 240 and patterned to have openings 466 thatexpose portions of polyimide layer 240. The remaining portions of thephotoresist layer serve as a masking structure 468. Alternatively,passivation layer 240 may be comprised of a photosensitive material thatcan be patterned like photoresist to form a masking structure. In thisalternative embodiment, the photoresist and masking structure 468 wouldbe absent because their function may be realized by passivation layer240.

FIGS. 39 and 40 are cross-sectional views of semiconductor component 400of FIGS. 37 and 38, respectively, at a later stage of manufacture. Alayer of electrically conductive material such as, for example, copperis formed in openings 466 to form coils 470 and contacts 472, 474, 476,and 478. Techniques for forming coils 470 and contacts 472, 474, 476,and 478 are similar to those for forming electrically conductive strips252A-252D discussed with reference to FIGS. 17-19.

Referring now to FIGS. 41 and 42, cross-sectional views of semiconductorcomponent 400 of FIGS. 39 and 40, respectively, at a later stage ofmanufacture are illustrated. The portions of electrically conductivebarrier structure 241 exposed by the removal of the photoresist layerare anisotropically etched to expose portions of polyimide layer 240. Apolyimide layer 260 is formed on coils 470, contacts 472, 474, 476, and478, and on the exposed portions of polyimide layer 240. Formation ofpolyimide layer 260 is described with reference to FIGS. 23 and 24.

FIGS. 43 and 44 are cross-sectional views of semiconductor component 400of FIGS. 41 and 42, respectively, taken at a later stage of manufacture.Coils 480 are formed over polyimide layer 260 using techniques similarto those described for forming electrically conductive strips 282A-282Dwith reference to FIGS. 25 and 26. In addition, contacts 482 and 484 areformed to be in contact with contacts 476 and 478, respectively. Apassivation layer 486 is formed over passivation layer 260, coils 470and 480, and contacts 472, 474, 476, and 478. By way of example,passivation layer 486 is polyimide.

Although certain preferred embodiments and methods have been disclosedherein, it will be apparent from the foregoing disclosure to thoseskilled in the art that variations and modifications of such embodimentsand methods may be made without departing from the spirit and scope ofthe invention. It is intended that the invention shall be limited onlyto the extent required by the appended claims and the rules andprinciples of applicable law.

What is claimed is:
 1. A semiconductor component, comprising: a firstelectrically conductive structure having first and second ends and abody region between the first and second ends; a second electricallyconductive structure having first and second ends and a body regionbetween the first and second ends, the second electrically conductivestructure vertically spaced apart from the first electrically conductivestructure, a first portion of the body region of the second electricallyconductive structure over a first portion of the body region of thefirst electrically conductive structure, and the first end of the firstelectrically conductive structure laterally and vertically spaced apartfrom the first end of the second electrically conductive structure; afirst bond wire having first and second ends, wherein the first end ofthe first bond wire is electrically coupled to the first end of thefirst electrically conductive structure; and a second bond wire havingfirst and second ends, wherein the first end of the second bond wire iselectrically coupled to the first end of the second electricallyconductive structure, and wherein the first electrically conductivestructure and the first bond wire are configured to form a portion of afirst coil that generates flux of a first polarity and the secondelectrically conductive structure and the second bond wire areconfigured to form a first portion of a second coil that generates fluxof a second polarity, the second polarity opposite to the firstpolarity.
 2. The semiconductor component of claim 1, further including athird electrically conductive structure having first and second ends anda body region between the first and second ends, wherein a second end ofthe first bond wire is electrically coupled to the second end of thethird electrically conductive structure, and wherein the second end ofthe third electrically conductive structure is laterally and verticallyspaced apart from the second end of the second electrically conductivestructure, wherein the third electrically conductive structure and thefirst bond wire are configured to form a second portion of the firstcoil.
 3. The semiconductor component of claim 2, wherein a secondportion of the body region of the second electrically conductivestructure is over a second portion of the body region of the thirdelectrically conductive structure.
 4. The semiconductor component ofclaim 2, further including a fourth electrically conductive structurehaving first and second ends and a body region between the first andsecond ends, the fourth electrically conductive structure verticallyspaced apart from the first electrically conductive structure and asecond portion of the body region of the fourth electrically conductivestructure over a second portion of the body region of the firstelectrically conductive structure, the second end of the thirdelectrically conductive structure laterally between the second ends ofthe second and the fourth electrically conductive structures, and thesecond end of the second bond wire electrically coupled to the secondend of the fourth electrically conductive structure, wherein the fourthelectrically conductive structure and the second bond wire areconfigured to form a second portion of the second coil.
 5. Thesemiconductor component of claim 4, further including: a fifthelectrically conductive structure having first and second ends and abody region between the first and second ends, the first end of thefifth electrically conductive structure between the first ends of thesecond and fourth electrically conductive structures, and the fifthelectrically conductive structure laterally and vertically spaced apartfrom the second and fourth electrically conductive structures; a thirdbond wire having first and second ends, wherein the first end of thethird bond wire is electrically coupled to the first end of the fifthelectrically conductive structure and the second end of the third bondwire is electrically coupled to the second end of the first electricallyconductive structure, wherein the fifth electrically conductivestructure and the third bond wire are configured to form a third portionof the first coil; and a fourth bond wire having first and second ends,wherein the first end of the fourth bond wire is electrically coupled tothe first end of the fourth electrically conductive structure, whereinthe fourth electrically conductive structure and the fourth bond wireare configured to form a third portion of the second coil.
 6. Thesemiconductor component of claim 5, wherein a first portion of the bodyregion of the fourth electrically conductive structure is over a firstportion of the body region of the fifth electrically conductivestructure.
 7. The semiconductor component of claim 5, further including:a sixth electrically conductive structure having first and second endsand a body region between the first and second ends, the second end ofthe sixth electrically conductive structure between the second ends ofthe first and the fifth electrically conductive structures and thesecond end of the fourth bond wire electrically coupled to the secondend of the sixth electrically conductive structure, wherein the sixthelectrically conductive structure and the fourth bond wire areconfigured to form a fourth portion of the second coil; a fifth bondwire having first and second ends, the second end of the fifth bond wireelectrically coupled to the second end of the fifth electricallyconductive structure, wherein the fifth electrically conductivestructure and the fifth bond wire are configured to form a fourthportion of the first coil; a seventh electrically conductive structurehaving first and second ends, the first end of the seventh electricallyconductive structure laterally between the first ends of the fourth andsixth electrically conductive structures, the first end of the fifthbond wire electrically coupled to the first end of the seventhelectrically conductive structure, wherein the seventh electricallyconductive structure and the fifth bond wire are configured to form afifth portion of the first coil; a sixth bond wire having first andsecond ends, the first end electrically coupled to the first end of thesixth electrically conductive structure, the sixth electricallyconductive structure and the sixth bond wire configured to form a fifthportion of the second coil; an eighth electrically conductive structurehaving first and second ends, the second end laterally between thesecond ends of the fifth and seventh electrically conductive structures,the second end of the sixth bond wire electrically coupled to the secondend of the eighth electrically conductive structure, the eighthelectrically conductive structure and the sixth bond wire configured toform a sixth portion of the second coil; a seventh bond wire havingfirst and second ends, the first end electrically coupled to the secondend of the seventh electrically conductive structure, the seventhelectrically conductive structure and the seventh bond wire configuredto form a sixth portion of the first coil; and an eighth bond wirehaving first and second ends, the second end electrically coupled to thesecond end of the second electrically conductive structure.
 8. Thesemiconductor component of claim 7, wherein the first, third, fifth, andeighth electrically conductive structures comprise electricallyconductive strips formed from a first common metallization system andthe second, fourth, sixth, and seventh electrically conductivestructures comprise electrically conductive strips formed from a secondcommon metallization system.
 9. The semiconductor component of claim 8,further including first and second contacts, wherein the first end ofthe eighth bond wire is electrically coupled to the first contact andthe first end of the fifth bond wire is electrically coupled to thesecond contact, and wherein the first end of the eighth electricallyconductive structure serves as a first terminal, the first contactserves as a second terminal, the second contact serves as a thirdterminal, and the first end of the sixth electrically conductivestructure serves as a fourth terminal.
 10. The semiconductor componentof claim 7, wherein a second portion of the body region of the sixthelectrically conductive structure is over a second portion of the bodyregion of the fifth electrically conductive structure.
 11. Thesemiconductor component of claim 7, wherein a first portion of the bodyregion of the seventh electrically conductive structure is over a firstportion of the body region of the third electrically conductivestructure.
 12. The semiconductor component of claim 7, wherein a secondportion of the body region of the seventh electrically conductivestructure is over a portion of the body region of the eighthelectrically conductive structure.
 13. A semiconductor component,comprising: a first set of electrically conductive strips, wherein eachelectrically conductive strip of the first set of electricallyconductive strips has a body region and first and second ends, andwherein the first set of electrically conductive strips is in a firstplane; a second set of electrically conductive strips, wherein eachelectrically conductive strip of the second set of electricallyconductive strips has a body region and first and second ends, andwherein the second set of electrically conductive strips is in a secondplane, the second plane different from the first plane, and wherein afirst end of a first electrically conductive strip of the second set ofelectrically conductive strips is laterally positioned between the firstends of first and second electrically conductive strips of the first setof electrically conductive strips; a first bond wire coupled between thefirst end of the second electrically conductive strip of the first setof electrically conductive strips and the second end of the firstelectrically conductive strip of the first set of electricallyconductive strips, wherein the first and second electrically conductivestrips of the first set of electrically conductive strips and the firstbond wire are configured to form a portion of a first coil thatgenerates flux of a first polarity and the second set of electricallyconductive strips are configured to form a first portion of a secondcoil that generates flux of a second polarity that is opposite to thefirst polarity.
 14. The semiconductor component of claim 13, wherein thefirst set of electrically conductive strips further includes a thirdelectrically conductive strip and the second set of electricallyconductive strips further includes second and third electricallyconductive strips.
 15. The semiconductor component of claim 14, furtherincluding: a second bond wire coupled between the first end of the firstelectrically conductive strip of the first set of electricallyconductive strips and the second end of the third electricallyconductive strip of the first set of electrically conductive strips; athird bond wire coupled between the first end of the first electricallyconductive strip of the second set of electrically conductive strips andthe second end of the third electrically conductive strip of the secondset of electrically conductive strips; and a fourth bond wire coupledbetween the first end of the first electrically conductive strip of thesecond set of electrically conductive strips and the second end of thesecond electrically conductive strip of the second set of electricallyconductive strips.
 16. The semiconductor component of claim 14, whereinthe first set of electrically conductive strips further includes afourth electrically conductive strip and the second set of electricallyconductive strips further includes a fourth electrically conductivestrip.
 17. The semiconductor component of claim 16, further including:first and second contacts; a fifth bond wire coupled between the firstcontact and the second end of the third electrically conductive strip ofthe second set of electrically conductive strips; a sixth bond wirecoupled between the first end of the third electrically conductive stripof the first set of electrically conductive strips and the first end ofthe fourth electrically conductive strip of the first set ofelectrically conductive strips; a seventh bond wire coupled between thefirst end of the second electrically conductive strip of the second setof electrically conductive strips and the second end of the fourthelectrically conductive strip of the second set of electricallyconductive strips; and an eighth bond wire coupled between the secondcontact and the second end of the fourth electrically conductive stripof the first set of electrically conductive strips.
 18. A semiconductorcomponent, comprising: a semiconductor material having a major surface;a first dielectric structure formed over the semiconductor material; afirst metallization system formed over the first dielectric structure,the first metallization system comprising: a first electricallyconductive strip having a body region and first and second ends; and asecond electrically conductive strip having a body region and first andsecond ends; a second dielectric structure formed over the firstmetallization system; and a second metallization system formed over thesecond dielectric structure, the second metallization system comprising:a third electrically conductive strip having a body region and first andsecond ends; a fourth electrically conductive strip having a body regionand first and second ends; first and second contacts in contact with thefirst and second ends of the first electrically conductive strip,respectively; third and fourth contacts in contact with the first andsecond ends of the second electrically conductive strip, respectively;fifth and sixth contacts in contact with the first and second ends ofthe third electrically conductive strip, respectively; seventh andeighth contacts in contact with the first and second ends of the fourthelectrically conductive strip, respectively; a first bond wire coupledto the first contact; a second bond wire coupled between the fifth andeighth contacts; a third bond wire coupled between the second and thirdcontacts; and a fourth bond wire coupled to the seventh contact, whereinthe first metallization system and the first and third bond wires areconfigured to form a portion of a first coil that generates flux of afirst polarity and the second metallization system and the second andfourth bond wires are configured to form a portion of a second coil thatgenerates flux of a second polarity, the second polarity opposite thefirst polarity.
 19. The semiconductor component of claim 18, wherein afirst portion of the third electrically conductive strip overlies afirst portion of the first electrically conductive strip, a firstportion of the fourth electrically conductive strip overlies a firstportion of the second electrically conductive strip, and a secondportion of the fourth electrically conductive strip overlies a secondportion of the first electrically conductive strip.
 20. Thesemiconductor component of claim 18, wherein the first metallizationsystem further includes: a fifth electrically conductive strip having abody region and first and second ends; and a sixth electricallyconductive strip having a body region and first and second ends; andwherein the second metallization system further includes: a seventhelectrically conductive strip having a body region and first and secondends; and an eighth electrically conductive strip having a body regionand first and second ends.
 21. The semiconductor component of claim 20,wherein the first, second, third, fourth, fifth, sixth, seventh, andeighth contacts are laterally spaced apart from one another.
 22. Thesemiconductor component of claim 20, wherein a second portion of thethird electrically conductive strip overlies a portion of the sixthelectrically conductive strip, a first portion of the seventhelectrically conductive strip overlies a first portion of the fifthelectrically conductive strip, a second portion of the seventhelectrically conductive strip overlies a second portion of the secondelectrically conductive strip, and a portion of the eighth electricallyconductive strip overlies a second portion of the fifth electricallyconductive strip.